QL65I7S-A-H Datasheet | QSI

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65I7S-A/B/C-H Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 .QSILaser. QL65I7S-A/B/C-H InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd. Ver. 2 Mar.2012 - OVERVIEW QL65I7S-A/B/C-H is a MOCVD grown 650nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 35Mw for optoelectronic devices such as DVD-RAM and Industrial Sensor. - APPLICATION - Industrial Sensor - DVD-RAM - Features - Visible Light Output : λp = 658 nm(Typ.) -...