Overview: QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :
Model : QL65L6S-A/B/C Tentative Signature of Approval
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Approval by Customer
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
.QSILaser. QL65L6S-A/B/C
InGaAlP Laser Diode Tentative Quantum Semiconductor International Co., Ltd. Ver. 1 Aug. 2006 ♦OVERVIEW QL65L6S-A/B/C is a MOCVD grown 660nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of CW 80mW and pulse 160mW - for optical storage devices such as High Power Laser Modules.
