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QL65L6S-A - LASER DIODE

Features

  • - Visible Light Output - Optical Power Output - Package Type : λp = 660 nm : 80mW CW : TO-18 (5.6mmφ).

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Datasheet Details

Part number QL65L6S-A
Manufacturer QSI
File Size 77.12 KB
Description LASER DIODE
Datasheet download datasheet QL65L6S-A Datasheet

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Full PDF Text Transcription

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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65L6S-A/B/C Tentative Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65L6S-A/B/C InGaAlP Laser Diode Tentative Quantum Semiconductor International Co., Ltd. Ver. 1 Aug. 2006 ♦OVERVIEW QL65L6S-A/B/C is a MOCVD grown 660nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of CW 80mW and pulse 160mW - for optical storage devices such as High Power Laser Modules.
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