QL65L6S-B Datasheet | QSI

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65L6S-A/B/C Tentative Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 .QSILaser. QL65L6S-A/B/C In Ga Al P Laser Diode Tentative Quantum Semiconductor International Co., Ltd. Ver. 1 Aug. 2006 - OVERVIEW QL65L6S-A/B/C is a MOCVD grown 660nm band In Ga Al P laser diode with quantum well structure. It's an attractive light source, with a typical light output power of CW 80m W and pulse 160m W - for optical storage devices such as High Power Laser Modules. - APPLICATION - High Power Laser Modules - Medical Applications - Portable High Density Optical Disc Drives - Features - Visible Light Output - Optical Power Output - Package Type : λp = 660 nm : 80m W CW : TO-18 (5.6mmφ) - ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 QL65L6SA Fig. 2...