QL65O6S-A
QL65O6S-A is LASER DIODE manufactured by QSI.
QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer :
Model : QL65O6S-A/B/C Tentative Signature of Approval
Approved by Checked by Issued by
Approval by Customer
315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836
.QSILaser.
QL65O6S-A/B/C
InGaAlP Laser Diode
Tentative
Quantum Semiconductor International Co., Ltd.
Ver. 1 Aug. 2006
- OVERVIEW
QL65O6S-A/B/C is a MOCVD grown 660nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of CW 100mW and pulse 250mW for optical storage devices such as High Power Laser Modules.
- APPLICATION
- High Power Laser Modules
- Medical Applications
-...
