Datasheet Details
| Part number | QL65O6S-C |
|---|---|
| Manufacturer | QSI |
| File Size | 104.88 KB |
| Description | LASER DIODE |
| Download | QL65O6S-C Download (PDF) |
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Overview: QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65O6S-A/B/C Tentative Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65O6S-A/B/C InGaAlP Laser Diode Tentative Quantum Semiconductor International Co., Ltd. Ver. 1 Aug. 2006 ♦OVERVIEW QL65O6S-A/B/C is a MOCVD grown 660nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of CW 100mW and pulse 250mW for optical storage devices such as High Power Laser Modules.
Download the QL65O6S-C datasheet PDF. This datasheet also includes the QL65O6S-A variant, as both parts are published together in a single manufacturer document.
| Part number | QL65O6S-C |
|---|---|
| Manufacturer | QSI |
| File Size | 104.88 KB |
| Description | LASER DIODE |
| Download | QL65O6S-C Download (PDF) |
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| Part Number | Description |
|---|---|
| QL65O6S-A | LASER DIODE |
| QL65O6S-B | LASER DIODE |
| QL65D5S-A | LASER DIODE |
| QL65D5S-A-L1 | LASER DIODE |
| QL65D5S-B | LASER DIODE |
| QL65D5S-B-L1 | LASER DIODE |
| QL65D5S-C | LASER DIODE |
| QL65D5S-C-L1 | LASER DIODE |
| QL65D5SA | LASER DIODE |
| QL65D6S-A | LASER DIODE |