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QL65O6S-C - LASER DIODE

This page provides the datasheet information for the QL65O6S-C, a member of the QL65O6S-A LASER DIODE family.

Features

  • - Visible Light Output - Optical Power Output - Package Type : λp = 660 nm : 100mW CW, 250mW Pulse : TO-18 (5.6mmφ).

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Datasheet preview – QL65O6S-C

Datasheet Details

Part number QL65O6S-C
Manufacturer QSI
File Size 104.88 KB
Description LASER DIODE
Datasheet download datasheet QL65O6S-C Datasheet
Additional preview pages of the QL65O6S-C datasheet.

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Full PDF Text Transcription

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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL65O6S-A/B/C Tentative Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 WWW.QSILaser.com QL65O6S-A/B/C InGaAlP Laser Diode Tentative Quantum Semiconductor International Co., Ltd. Ver. 1 Aug. 2006 ♦OVERVIEW QL65O6S-A/B/C is a MOCVD grown 660nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of CW 100mW and pulse 250mW for optical storage devices such as High Power Laser Modules.
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