QL68I6S-C Datasheet | QSI

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL68I6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer .QSILaser. QL68I6S-A/B/C In Ga Al P Laser Diode Quantum Semiconductor International Co., Ltd 2004. Rev 1. - OVERVIEW QL68I6S-A/B/C is a MOCVD grown 0.68 m band In Ga Al P laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 30m W for opto-electronic devices such as Industrials. - APPLICATION Industrials Laser Module - Features Visible Light Output : λp = 685nm Optical Power Output : 30 m W CW Package Type : TO-18 (5.6mmφ) Built-in Photo Diode for Monitoring Laser Output - ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathod, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathod (Fig. 3) Fig. 1 QL68I6SA Fig. 2 QL68I6SB Fig. 3 QL68I6SC -...