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QSI LASER DIODE SPECIFICATIONS FOR APPROVAL
Customer : Model : QL68J6S-A/B/C Signature of Approval
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QL68J6S-A/B/C
InGaAlP Laser Diode Quantum Semiconductor International Co., Ltd
2007-11-22
♦ OVERVIEW
QL68J6S-A/B/C is a MOCVD grown 0.68 m band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 50mW for opto-electronic devices such as Industrials.
♦ APPLICATION
Industrials Laser Module
♦ FEATURES
Visible Light Output : λp = 685nm
Optical Power Output : 50 mW CW
Package Type
: TO-18 (5.6mmφ)
Built-in Photo Diode for Monitoring Laser Output
♦ ELECTRICAL CONNECTION
Bottom View
Pin Configuration
A LD cathod, PD anode (Fig. 1) B LD , PD anode (Fig.
QL68J6S-A Datasheet
