QL78J6S-B Datasheet | QSI

QSI LASER DIODE SPECIFICATIONS FOR APPROVAL Customer : Model : QL78J6S-A/B/C Signature of Approval Approved by Checked by Issued by Approval by Customer 315-9, Cheonheung-ri, Sungger-eup, Cheonan-city, Chungnam, Korea 330-836 .QSILaser. QL78J6S-A/B/C Al Ga As Laser Diode Quantum Semiconductor International Co., Ltd. Ver. 0 2004 - OVERVIEW QL78J6S-A/B/C is a MOCVD grown 780nm band Al Ga As laser diode with quantum well structure. It’s an attractive light source, with a typical light output power of 50m W for industrial optical module and sensor application - APPLICATION - Sensor - Industrial optical module - Features - Visible Light Output : λp = 780 nm - Optical Power Output : 50m W CW - Package Type : TO-18 (5.6mmφ) - Built-in Photo Diode for Monitoring Laser Diode - ELECTRICAL CONNECTION Bottom View Pin Configuration A LD cathode, PD anode (Fig. 1) B LD , PD anode (Fig. 2) C LD anode, PD cathode (Fig. 3) Fig. 1 QL78J6SA Fig. 2 QL78J6SB Fig. 3 QL78J6SC -...