H11B815
Description
The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package.
Key Features
- pact 4-pin package
- Current Transfer Ratio: 600% minimum (at IF = 1 mA)
- High isolation voltage between input and output (5300 VRMS)
