HYB18T1G400BC Datasheet | Qimonda

Features The 1-Gbit Double-data-Rate SDRAM offers the following key Features : - Off-Chip-Driver impedance adjustment (OCD) and On- 1.8 V ± 0.1 V Power Supply 1.8 V ± 0.1 V (SSTL_18) patible I/O Die-Termination (ODT) for better signal quality - DRAM organizations with 4, 8 and 16 data in/outputs - Auto-Precharge operation for read and write bursts - Double Data Rate architecture: two data transfers per - Auto-Refresh, Self-Refresh and power saving Powerclock cycle four internal banks for concurrent operation Down modes - Programmable CAS Latency: 3, 4, 5 and 6 - Average Refresh Period 7.8 µs at a TCASE lower than - Programmable Burst Length: 4 and 8 85 °C, 3.9 µs between 85 °C and 95 °C - Differential clock inputs (CK and CK) - Programmable self refresh rate via EMRS2 setting - Programmable partial array refresh via EMRS2 settings - Bi-directional, differential data strobes (DQS and DQS) are transmitted / received with data. Edge aligned with read - DCC enabling via EMRS2 setting - Full and reduced Strength Data-Output Drivers data and center-aligned with write data - 1K page size for ×4 & ×8, 2K page size for ×16 - DLL aligns DQ and DQS transitions with clock - Package: P(G)-TFBGA-68 and P(G)-TFBGA-84 - DQS can be disabled for single-ended data strobe operation - Ro HS pliant Products1) - mands entered on each positive clock edge, data and - All Speed grades faster than DDR2- 400 ply with data mask are referenced to both edges of DQS DDR2- 400 timing specifications when run at a clock rate - Data masks (DM) for write data of 200 MHz. - Posted CAS by programmable additive latency for better mand and data bus efficiency TABLE...