QPA1003D Datasheet | Qorvo

-  8 GHz 10 W Ga N Power Amplifier Product Description Qorvo’s QPA1003D is a wideband high power MMIC amplifier fabricated on Qorvo’s production 0.15um Ga N on Si C process (QGa N15). The QPA1003D operates from 1 - 8 GHz and typically provides 10 W saturated output power with power-added efficiency of 30% and large-signal gain of 25 d B. This bination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. The QPA1003D is matched to 50Ω with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance makes it ideally suited in support of test instrumentation and electronic warfare, as well as, supporting multiple radar and munication bands. The QPA1003D is 100% DC and RF tested on-wafer to ensure pliance to electrical specifications. Lead-free and Ro HS pliant. Product Features - Frequency Range: 1 -  8 GHz - POUT: 40 d Bm (PIN = 15 d Bm) - PAE: 30 % (PIN = 15 d Bm) - Large Signal Gain: 25 d B (PIN = 15 d Bm) - Small Signal Gain: 30 d B - Bias: VD = +28 V, IDQ = 650 m A - Chip Dimensions: 3.3 x 3.55 x 0.10 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications - Electronic Warfare (EW) - Radar - munications - Test Instrumentation Data Sheet Rev. F, July 2022 Ordering Information Part No. QPA1003D QPA1003DPCB4B01 Description 1 -  8 GHz 10 W Ga N Power Amplifier Evaluation Board - 1 of 20 -...