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QPA1003D Datasheet 10w Gan Power Amplifier

Manufacturer: Qorvo

Overview: QPA1003D 1 – 8 GHz 10 W GaN Power Amplifier Product.

Datasheet Details

Part number QPA1003D
Manufacturer Qorvo
File Size 477.66 KB
Description 10W GaN Power Amplifier
Datasheet QPA1003D-Qorvo.pdf

General Description

Qorvo’s QPA1003D is a wideband high power MMIC amplifier fabricated on Qorvo’s production 0.15um GaN on SiC process (QGaN15).

The QPA1003D operates from 1 – 8 GHz and typically provides 10 W saturated output power with power-added efficiency of 30% and large-signal gain of 25 dB.

This bination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost.

Key Features

  • Frequency Range: 1 .
  •  8 GHz.
  • POUT: 40 dBm (PIN = 15 dBm).
  • PAE: 30 % (PIN = 15 dBm).
  • Large Signal Gain: 25 dB (PIN = 15 dBm).
  • Small Signal Gain: 30 dB.
  • Bias: VD = +28 V, IDQ = 650 mA.
  • Chip Dimensions: 3.3 x 3.55 x 0.10 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram 2 3 1 4.

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QPA1003D Distributor