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QPA1003P Datasheet 10w Gan Power Amplifier

Manufacturer: Qorvo

Overview: QPA1003P 1 – 8 GHz 10 W GaN Power Amplifier Product.

Datasheet Details

Part number QPA1003P
Manufacturer Qorvo
File Size 569.57 KB
Description 10W GaN Power Amplifier
Datasheet QPA1003P-Qorvo.pdf

General Description

Qorvo’s QPA1003P is a wideband high power MMIC amplifier fabricated on Qorvo’s production 0.15um GaN on SiC process (QGaN15).

The QPA1003P operates from 1 – 8 GHz and typically provides 10 W saturated output power with power-added efficiency of 30% and large-signal gain of 25 dB.

This bination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost.

Key Features

  • Frequency Range: 1 .
  •  8 GHz.
  • POUT: 40 dBm (PIN = 15 dBm).
  • PAE: 30 % (PIN = 15 dBm).
  • Large Signal Gain: 25 dB (PIN = 15 dBm).
  • Small Signal Gain: 30 dB.
  • Bias: VD = +28 V, IDQ = 650 mA.
  • Package Dimensions: 5.0 x 6.0 x 1.76 mm.
  • Process Technology: QGaN15 Functional Block Diagram 28 27 26 25 24 1 2 RF In 3 4 5 6 7 8 29 9 10 11 12 13 14 Performance is typical across frequency. Please reference electrical specification ta.

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QPA1003P Distributor