QPA1003P Datasheet | Qorvo

-  8 GHz 10 W Ga N Power Amplifier Product Description Qorvo’s QPA1003P is a wideband high power MMIC amplifier fabricated on Qorvo’s production 0.15um Ga N on Si C process (QGa N15). The QPA1003P operates from 1 - 8 GHz and typically provides 10 W saturated output power with power-added efficiency of 30% and large-signal gain of 25 d B. This bination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. The QPA1003P is matched to 50 Ω with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance makes it ideally suited in support of test instrumentation and electronic warfare, as well as, supporting multiple radar and munication bands. Lead-free and Ro HS pliant. Product Features - Frequency Range: 1 -  8 GHz - POUT: 40 d Bm (PIN = 15 d Bm) - PAE: 30 % (PIN = 15 d Bm) - Large Signal Gain: 25 d B (PIN = 15 d Bm) - Small Signal Gain: 30 d B - Bias: VD = +28 V, IDQ = 650 m A - Package Dimensions: 5.0 x 6.0 x 1.76 mm - Process Technology: QGa N15 Functional Block Diagram 28 27 26 25 24 1 2 RF In 3 4 5 6 7 8 29 9 10 11 12 13 14 Performance is typical across frequency. Please reference electrical specification table and data plots for more details. 23 22 RF Out 21 20 19 18 17 16 15 Applications - Electronic Warfare (EW) - Radar - munications - Test Instrumentation Ordering Information Part...