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QPA1003P - 10W GaN Power Amplifier

General Description

Qorvo’s QPA1003P is a wideband high power MMIC amplifier fabricated on Qorvo’s production 0.15um GaN on SiC process (QGaN15).

8 GHz and typically provides 10 W saturated output power with power-added efficiency of 30% and large-signal gain of 25 dB.

Key Features

  • Frequency Range: 1 .
  •  8 GHz.
  • POUT: 40 dBm (PIN = 15 dBm).
  • PAE: 30 % (PIN = 15 dBm).
  • Large Signal Gain: 25 dB (PIN = 15 dBm).
  • Small Signal Gain: 30 dB.
  • Bias: VD = +28 V, IDQ = 650 mA.
  • Package Dimensions: 5.0 x 6.0 x 1.76 mm.
  • Process Technology: QGaN15 Functional Block Diagram 28 27 26 25 24 1 2 RF In 3 4 5 6 7 8 29 9 10 11 12 13 14 Performance is typical across frequency. Please reference electrical specification ta.

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Datasheet Details

Part number QPA1003P
Manufacturer Qorvo
File Size 569.57 KB
Description 10W GaN Power Amplifier
Datasheet download datasheet QPA1003P Datasheet

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QPA1003P 1 – 8 GHz 10 W GaN Power Amplifier Product Description Qorvo’s QPA1003P is a wideband high power MMIC amplifier fabricated on Qorvo’s production 0.15um GaN on SiC process (QGaN15). The QPA1003P operates from 1 – 8 GHz and typically provides 10 W saturated output power with power-added efficiency of 30% and large-signal gain of 25 dB. This combination of wideband performance provides the flexibility designers are looking for to improve system performance while reducing size and cost. The QPA1003P is matched to 50 Ω with integrated DC blocking capacitors on both RF I/O ports simplifying system integration. The wideband performance makes it ideally suited in support of test instrumentation and electronic warfare, as well as, supporting multiple radar and communication bands.