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QPA2213 Datasheet 2watt Gan Amplifier

Manufacturer: Qorvo

Overview: QPA2213 ® 2 – 20 GHz 2 Watt GaN Amplifier Product Overview Qorvo’s QPA2213 is a packaged wide band driver amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 2.0 – 20.0 GHz, the QPA2213 provides > 2 W of saturated output power and 16 dB of large-signal gain while achieving > 23% poweradded efficiency. The QPA2213 is packaged in a 4.5 x 4.5 mm laminate package. It can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages. The QPA2213 has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The QPA2213 is ideal for both mercial and military wide band or narrow band systems. Lead-free and RoHS pliant.

Datasheet Details

Part number QPA2213
Manufacturer Qorvo
File Size 0.97 MB
Description 2Watt GaN Amplifier
Datasheet QPA2213-Qorvo.pdf

General Description

2  – 20 GHz 2 Watt GaN Amplifier (10 Pcs.) Samples (2 pcs.) Evaluation Board for QPA2213 1 of 28 .qorvo.

QPA2213 ® 2  – 20 GHz 2 Watt GaN Amplifier Absolute Maximum Ratings Parameter Drain Voltage (VD) Value / Range 29.5 V Gate Voltage Range (VG) -4 V to 0 V Drain Current (ID) 890 mA Gate Current (IG) See plot pg.

23 Power Dissipation (PDISS), 85 °C 13.7 W Input Power (PIN), 50 Ω, VD=18 V, IDQ=330 mA, 85 °C Input Power (PIN), 3:1 VSWR, VD=18 V, IDQ=330 mA, 85 °C 27 dBm 27 dBm Soldering Temperature 260 °C Storage Temperature -55 to +125 °C Operation of this dev

Key Features

  • Frequency Range: 2 .
  •  20 GHz.
  • PSAT (PIN=18 dBm): 34 dBm.
  • PAE (PIN=18 dBm): 23 %.
  • Power Gain (PIN=18 dBm): 16 dB.
  • Small Signal Gain: 25 dB.
  • Noise Figure: 4.0 dB.
  • Bias: VD = 18 V, IDQ = 330 mA, PIN = 18 dBm.
  • Package Dimensions: 4.50 x 4.50 x 1.74 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram RF IN RF OUT.

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QPA2213 Distributor