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QPA2213D - 2Watt GaN Amplifier

General Description

2  

Data Sheet Rev.

© 2021 Qorvo US, Inc.

All rights reserved.

 20 GHz 2 Watt GaN Amplifier Ab

Key Features

  • Frequency Range: 2 .
  •  20 GHz.
  • PSAT (PIN=18 dBm): 34 dBm.
  • PAE (PIN=18 dBm): 23 %.
  • Power Gain (PIN=18 dBm): 16 dB.
  • Small Signal Gain: 25 dB.
  • Noise Figure: 4.0 dB.
  • Bias: VD = 18 V, IDQ = 330 mA.
  • Die Dimensions: 2.75 x 2.75 x 0.10 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. RF IN RF OUT.

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Datasheet Details

Part number QPA2213D
Manufacturer Qorvo
File Size 886.10 KB
Description 2Watt GaN Amplifier
Datasheet download datasheet QPA2213D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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QPA2213D ® 2 – 20 GHz 2 Watt GaN Amplifier Product Overview Qorvo’s QPA2213D is a wide band driver amplifier MMIC fabricated on Qorvo’s production 0.15 um GaN on SiC process (QGaN15). Covering 2.0 – 20.0 GHz, the QPA2213D provides > 2 W of saturated output power and 16 dB of large-signal gain while achieving > 23% poweradded efficiency. The QPA2213D MMIC dimensions are 2.75 x 2.75 x 0.10 mm. It can support a variety of operating conditions to best support system requirements. With good thermal properties, it can support a range of bias voltages. The QPA2213D has DC blocking capacitors on both RF ports, which are matched to 50 ohms. The QPA2213D is ideal for both commercial and military wide band or narrow band systems. Lead-free and RoHS compliant.