QPD1011 - 7W GaN RF Input-Matched Transistor

Qorvo

General Description

7” Short Reel 100 Pieces 50

Datasheet Rev.

1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor Absolute Maximum Ratings1 Recommended Operating Co

Key Features

Frequency: 30 to 1200 MHz.
Output Power (P3dB)1: 8.7 W.
Linear Gain1: 21 dB.
Typical PAE3dB1: 60 %.
Operating Voltage: 50 V.
CW and Pulse capable Note 1: @ 1 GHz Load Pull.

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QPD1011 7w gan rf input-matched transistor by Qorvo - Datasheet Preview

Datasheet Details

Part number	QPD1011
Manufacturer	Qorvo
File Size	1.57 MB
Description	7W GaN RF Input-Matched Transistor
Datasheet	QPD1011 Datasheet

Full PDF Text Transcription for QPD1011 (Reference)

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QPD1011 30 – 1200 MHz, 50 V, 7 W GaN RF Input-Matched Transistor Product Overview The Qorvo QPD1011 is a 7W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT which opera...

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is a 7W (P3dB), 50Ω-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 1.2 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in a 5 x 6 mm leadless SMT package that saves real estate of already space-constrained handheld radios. Lead-free and ROHS compliant. Evaluation boards are available upon request. Functional Block Diagram 1 8 2 Input 7 Matching NW 3 6 4 5 5 x 6 x 0.85 mm Package Key Features • Frequency: 30 to 1200 MHz • Output Power (P3

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