QPD1013 Key Features
- Frequency: DC to 2.7 GHz
- Output Power (P3dB): 178 W1
- Linear Gain: 21.8 dB1
- Typical PAE3dB: 64.8 %1
- Operating Voltage: 65 V
- Low thermal resistance package
- CW and Pulse capable
- 7.2 x 6.6 mm package
- Part: QPD1013
- Manufacturer: Qorvo
- Size: 2.31 MB
Related Qorvo Datasheets
| Part Number | Description |
|---|---|
| QPD1011 | 7W GaN RF Input-Matched Transistor |
| QPD1018 | GaN RF IMFET |
| QPD1019 | GaN RF IMFET |
| QPD1003 | GaN RF IMFET |
| QPD1006 | RF IMFET |
QPD1013 Description
The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz. This is a single stage unmatched power amplifier transistor in an overmolded plastic package. The high power and wide bandwidth of the QPD1013 makes it suitable for many different applications from DC to 2.7 GHz.