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QPD1013 - GaN RF Transistor

Product Overview

Qorvo

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QPD1013 GaN RF Transistor by Qorvo - Datasheet Preview — Datasheet preview – QPD1013

Datasheet Details

Part number	QPD1013
Manufacturer	Qorvo
File Size	2.31 MB
Description	GaN RF Transistor
Datasheet	QPD1013 Datasheet
Additional preview pages of the QPD1013 datasheet.

Product details

Description

The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz.

Features

Frequency: DC to 2.7 GHz.
Output Power (P3dB): 178 W1.
Linear Gain: 21.8 dB1.
Typical PAE3dB: 64.8 %1.
Operating Voltage: 65 V.
Low thermal resistance package.
CW and Pulse capable.
7.2 x 6.6 mm package Note 1: @ 1.8 GHz (Loadpull).

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Published: Feb 27, 2019 |