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QPD1013 - GaN RF Transistor

General Description

The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz.

This is a single stage unmatched power amplifier transistor in an overmolded plastic package.

Key Features

  • Frequency: DC to 2.7 GHz.
  • Output Power (P3dB): 178 W1.
  • Linear Gain: 21.8 dB1.
  • Typical PAE3dB: 64.8 %1.
  • Operating Voltage: 65 V.
  • Low thermal resistance package.
  • CW and Pulse capable.
  • 7.2 x 6.6 mm package Note 1: @ 1.8 GHz (Loadpull).

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Datasheet Details

Part number QPD1013
Manufacturer Qorvo
File Size 2.31 MB
Description GaN RF Transistor
Datasheet download datasheet QPD1013 Datasheet

Full PDF Text Transcription for QPD1013 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for QPD1013. For precise diagrams, and layout, please refer to the original PDF.

QPD1013 150W, 65V, DC – 2.7 GHz, GaN RF Transistor General Description The Qorvo QPD1013 is a 150 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz. Thi...

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(P3dB) discrete GaN on SiC HEMT which operates from DC to 2.7 GHz. This is a single stage unmatched power amplifier transistor in an overmolded plastic package. The high power and wide bandwidth of the QPD1013 makes it suitable for many different applications from DC to 2.7 GHz. The device is housed in an industry-standard 7.2 x 6.6 mm surface mount DFN package. Lead-free and ROHS compliant Evaluation boards are available upon request. Functional Block Diagram 6 Pin DFN (7.2 x 6.6 x 0.9 mm) Product Features  Frequency: DC to 2.7 GHz  Output Power (P3dB): 178 W1  Linear Gain: 21.8 dB1  Typical PAE3dB: 64.

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