QPD1018 - GaN RF IMFET

Qorvo

General Description

Tray of 18 QPD1018 Pack of 2 QPD1018 2.7

Datasheet Rev.

Key Features

Frequency: 2.7 to 3.1 GHz.
Output Power (P3dB)1: 575 W.
Linear Gain1: 17.7 dB.
Typical PAE3dB1: 67.9%.
Operating Voltage: 50 V.
Low thermal resistance package.
Pulse capable Note 1: @ 2.9 GHz.

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QPD1018 gan rf imfet by Qorvo - Datasheet Preview

Datasheet Details

Part number	QPD1018
Manufacturer	Qorvo
File Size	1.85 MB
Description	GaN RF IMFET
Datasheet	QPD1018 Datasheet

Full PDF Text Transcription for QPD1018 (Reference)

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QPD1018 500W, 50V, 2.7 – 3.1 GHz, GaN RF IMFET Product Overview The QPD1018 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 2.7 to 3.1 G...

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ally matched discrete GaN on SiC HEMT which operates from 2.7 to 3.1 GHz on a 50V supply rail. The device is GaN IMFET fully matched to 50 Ω in an industry standard air cavity package and is ideally suited for military radar. ROHS compliant. Evaluation boards are available upon request. Functional Block Diagram 17.40 x 24.00 x 4.31 mm Key Features1 • Frequency: 2.7 to 3.1 GHz • Output Power (P3dB)1: 575 W • Linear Gain1: 17.7 dB • Typical PAE3dB1: 67.9% • Operating Voltage: 50 V • Low thermal resistance package • Pulse capable Note 1: @ 2.9 GHz Applications • Military radar • Civilian radar • Test instrumentation Ordering

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