Datasheet Details
| Part number | QPD1019 |
|---|---|
| Manufacturer | Qorvo |
| File Size | 1.14 MB |
| Description | GaN RF IMFET |
| Datasheet |
 QPD1019 Datasheet
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| Part number | QPD1019 |
|---|---|
| Manufacturer | Qorvo |
| File Size | 1.14 MB |
| Description | GaN RF IMFET |
| Datasheet |
QPD1019 Datasheet
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Data Sheet Rev.
D, August 2022 Subject to change without notice.
3.3 GHz, GaN RF IMFET Absolute Maximum Ratings1 Parameter Rating Units Breakdown Voltage (BVQPD1019 ® 500 W, 50 V, 2.9 – 3.3 GHz, GaN RF IMFET Product Overview The QPD1019 is a 500W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 2.9 to 3.3 GHz and a 50V supply rail.
The device is GaN IMFET fully matched to 50 Ω in an industry standard air cavity package and is ideally suited for military radar.
ROHS compliant.
Evaluation boards are available upon request.
Functional Block Diagram 17.40 x 24.00 x 4.
| Part Number | Description |
|---|---|
| QPD1011 | 7W GaN RF Input-Matched Transistor |
| QPD1013 | GaN RF Transistor |
| QPD1018 | GaN RF IMFET |
| QPD1003 | GaN RF IMFET |
| QPD1006 | RF IMFET |
| QPD1026L | GaN RF Input-Matched Transistor |
| QPD0005M | GaN RF Transistor |
| QPD0012 | Asymmetric Doherty |
| QPD0030 | GaN RF Power Transistor |
| QPD0305 | Dual GaN RF Transistor |