QPD1019 Key Features
- Frequency: 2.9 to 3.3 GHz
- Output Power (P3dB)1: 590 W
- Linear Gain1: 15.5 dB
- Typical DE3dB1: 69%
- Operating Voltage: 50 V
- Low thermal resistance package
- Pulse capable Notes
- Part: QPD1019
- Manufacturer: Qorvo
- Size: 1.14 MB
Related Qorvo Datasheets
| Part Number | Description |
|---|---|
| QPD1011 | 7W GaN RF Input-Matched Transistor |
| QPD1013 | GaN RF Transistor |
| QPD1018 | GaN RF IMFET |
| QPD1003 | GaN RF IMFET |
| QPD1006 | RF IMFET |
QPD1019 Description
Waffle Pack of 18 QPD1019 2.9 3.3 GHz EVB Data Sheet Rev. D, August 2022 Subject to change without notice. | All rights reserved 1 of 17 .qorvo.