QPM1021 Datasheet 100W GaN Power Amplifier

Manufacturer: Qorvo

QPM1021 100w gan power amplifier by Qorvo - Datasheet Preview

Datasheet Details

Part number	QPM1021
Manufacturer	Qorvo
File Size	649.14 KB
Description	100W GaN Power Amplifier
Datasheet	QPM1021 Datasheet

General Description

10–12 GHz 100 Watt GaN Power Amplifier (20 pcs.) QPM1021 Samples (2 pcs.) QPM1021 Evaluation Board Data Sheet Rev.

G, August 2023 | Subject to change without notice 1 of 16 www.qorvo.com QPM1021 ® 10 – 12 GHz 100 W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Drain Voltage (VD) 29.5 V Gate Voltage Range (VG) −5 to 0 V Drain Current (ID) 18.2 A Gate Current (IG) Power Dissipation (PDISS), 85 °C, Pulsed;

PW = 150 us, DC = 20% Input Power (PIN), 50 Ω, 85 °C , VD = 28 V, Pulsed;

Overview

QPM1021 ® 10 – 12 GHz 100 W GaN Power Amplifier Product Overview Qorvo’s QPM1021 is a packaged, high power amplifier fabricated on Qorvo’s production 0.15 um GaN on SiC process.

The QPM1021 operates from 10 – 12 GHz and provides 100 W (50 dBm) of saturated output power with 20 dB of large signal gain and greater than 32 % power–added efficiency.

The QPM1021 is packaged in a 10-lead 19.05 x 19.05 mm bolt-down package, with a pure copper base for superior thermal management.

Key Features

Frequency Range: 10.
12 GHz.
PSAT: > 50 dBm (PIN = 28 dBm).
PAE: > 32% (PIN = 28 dBm).
Large Signal Gain: > 20 dB (PIN = 28 dBm).
Small Signal Gain: > 26 dB.
Bias: VD = 28 V, IDQ = 2.0 A.
Package Dimensions: 19.05 x 19.05 x 4.52 mm.
Performance Under Pulsed Operation Functional Block Diagram 1 2 RF IN 3 4 5 10 9 8 RF OUT 7 6 Performance is typical across frequency. Please reference electrical specification table.

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