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TGA2227-SM - GaN Low Noise Amplifier

General Description

The TGA2227

SM is a packaged, low noise amplifier offering high electrical performance, along with exceptional robustness to incident power.

SM operates over 2   22 GHz and delivers >15 dB small

Key Features

  • List Frequency Range: 2 .
  •  22 GHz.
  • High Input Power Survivability: 40 dBm.
  • Noise Figure: 2.0 dB (mid.
  • band).
  • Gain > 15 dB.
  • IM3:.
  • 36.5 dBc (PIN /tone =.
  • 4 dBm, Δf=10 MHz).
  • P1dB > +22 dBm.
  • Bias: VD = +8 V, IDQ = 125 mA.
  • Operating Drain Voltage Range: +5 to +15 V.
  • Package Dimensions: 4.0 mm x 4.0 mm x 1.8 mm Functional Block Diagram.

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Datasheet Details

Part number TGA2227-SM
Manufacturer Qorvo
File Size 855.80 KB
Description GaN Low Noise Amplifier
Datasheet download datasheet TGA2227-SM Datasheet

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TGA2227-SM 2 – 22 GHz GaN Low Noise Amplifier Product Description The TGA2227–SM is a packaged, low noise amplifier offering high electrical performance, along with exceptional robustness to incident power. Fabricated on Qorvo’s 0.15 um GaN on SiC production process (QGaN15), the TGA2227–SM operates over 2 – 22 GHz and delivers >15 dB small signal gain and >+22 dBm P1dB while supporting 2 dB mid-band Noise Figure. Robustness to incident power levels of up to 10 Watts is an industry first for a low noise MMIC amplifier and cannot be achieved in competing technologies. This supports potential system cost savings and board area reduction by removal of receive protection circuitry. This would also improve system-level noise figure.