Datasheet Details
| Part number | TGA2237-SM |
|---|---|
| Manufacturer | Qorvo |
| File Size | 1.12 MB |
| Description | 10W GaN Power Amplifier |
| Datasheet | TGA2237-SM-Qorvo.pdf |
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Overview: TGA2237-SM ® 0.03–2.5 GHz 10 W GaN Power Amplifier Product Overview Qorvo’s TGA2237-SM is a wideband distributed amplifier fabricated on Qorvo’s production 0.25 um GaN on SiC process. The TGA2237-SM operates from 0.03–2.5 GHz and provides greater than 10 W of saturated output power with greater than 13 dB of large signal gain and greater than 50% power-added efficiency. The TGA2237-SM is available in a low-cost, surface mount 32 lead 5 x 5 laminated QFN. It is ideally suited to support both radar and communication applications across defense and commercial markets as well as electronic warfare. The TGA2237-SM is fully matched to 50Ω at both RF ports allowing for simple system integration. DC blocks are required on both RF ports and the drain voltage must be injected through an off chip bias-tee on the RF output port. Lead-free and RoHS compliant.
| Part number | TGA2237-SM |
|---|---|
| Manufacturer | Qorvo |
| File Size | 1.12 MB |
| Description | 10W GaN Power Amplifier |
| Datasheet | TGA2237-SM-Qorvo.pdf |
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|
TGA2237-SM 0.03–2.5 GHz 10 W GaN Power Amplifier TGA2237-SMEVB Evaluation Board for TGA2237-SM Data Sheet Rev.
E, April 2022 | Subject to change without notice 1 of 18 www.qorvo.com ® Absolute Maximum Ratings Parameter Drain Voltage (VD) Value / Rang 40eV Gate Voltage Range (VG) -8 to 0 V Drain Current (ID) 1.2 A Gate Current (IG) −2.4 to 8.4 mA Power Dissipation (PDISS), 85 °C 19 W Input Power (PIN), CW, 50 Ω, 85 °C 33 dBm(*) Input Power (PIN), CW, VSWR 3:1, VD = 32V, 85 °C 33 dBm(*) Max VSWR, CW, PIN = 27 dBm, VD = 32 V, 85 °C (Lo
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| TGA2237-SM | 10W GaN Power Amplifier | TriQuint Semiconductor | |
| TGA2237 | 10W GaN Power Amplifier | TriQuint Semiconductor |
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