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TGA2237-SM - 10W GaN Power Amplifier

General Description

TGA2237-SM 0.03

Data Sheet Rev.

Key Features

  • Frequency Range: 0.03.
  • 2.5 GHz.
  • PSAT: 40 dBm at PIN = 27 dBm.
  • P1 dB: 33 dBm.
  • PAE: 50%.
  • Large Signal Gain: 13 dB.
  • Small Signal Gain: 19 dB.
  • Input Return Loss: 10 dB.
  • Output Return Loss: 12 dB.
  • Bias: VD = 32 V, IDQ = 360 mA.
  • Wideband Flat Power.
  • Package Dimensions: 5.0 x 5.0 x 1.596 mm Functional Block Diagram 32 31 30 29 28 27 26 25 1 2 3 4 RF IN 5 6 7 8 24 23 22 21 20 RF OUT 19 18 17 9.

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Datasheet Details

Part number TGA2237-SM
Manufacturer Qorvo
File Size 1.12 MB
Description 10W GaN Power Amplifier
Datasheet download datasheet TGA2237-SM Datasheet

Full PDF Text Transcription (Reference)

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TGA2237-SM ® 0.03–2.5 GHz 10 W GaN Power Amplifier Product Overview Qorvo’s TGA2237-SM is a wideband distributed amplifier fabricated on Qorvo’s production 0.25 um GaN on SiC process. The TGA2237-SM operates from 0.03–2.5 GHz and provides greater than 10 W of saturated output power with greater than 13 dB of large signal gain and greater than 50% power-added efficiency. The TGA2237-SM is available in a low-cost, surface mount 32 lead 5 x 5 laminated QFN. It is ideally suited to support both radar and communication applications across defense and commercial markets as well as electronic warfare. The TGA2237-SM is fully matched to 50Ω at both RF ports allowing for simple system integration.