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TGA2237-SM - 10W GaN Power Amplifier

General Description

TriQuint’s TGA2237-SM is a wideband distributed amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process.

2.5GHz and provides greater than 10W of saturated output power with greater than 13dB of large signal gain and greater than 50% power-a

Key Features

  • Frequency Range: 0.03.
  • 2.5GHz.
  • PSAT: >40dBm at PIN = 27dBm.
  • P1dB: >33dBm.
  • PAE: >50%.
  • Large Signal Gain: >13dB.
  • Small Signal Gain: >19dB.
  • Input Return Loss: >10dB.
  • Output Return Loss: >12dB.
  • Bias: VD = 32V, IDQ = 360mA, VG = -2.6V Typical.
  • Wideband Flat Power.
  • Package Dimensions: 5.0 x 5.0 x 1.45 mm Functional Block Diagram 32 31 30 29 28 27 26 25 1 2 3 4 RF IN 5 6 7 8 24 23 22 21 20RF OUT 19 18 17 9 10 11 12 13 14 15 16 General.

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Datasheet Details

Part number TGA2237-SM
Manufacturer TriQuint Semiconductor
File Size 753.52 KB
Description 10W GaN Power Amplifier
Datasheet download datasheet TGA2237-SM Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Applications  Commercial and military radar  Communications  Electronic Warfare TGA2237-SM 0.03 – 2.5GHz 10W GaN Power Amplifier QFN 5x5 mm 32L Product Features  Frequency Range: 0.03 – 2.5GHz  PSAT: >40dBm at PIN = 27dBm  P1dB: >33dBm  PAE: >50%  Large Signal Gain: >13dB  Small Signal Gain: >19dB  Input Return Loss: >10dB  Output Return Loss: >12dB  Bias: VD = 32V, IDQ = 360mA, VG = -2.6V Typical  Wideband Flat Power  Package Dimensions: 5.0 x 5.0 x 1.45 mm Functional Block Diagram 32 31 30 29 28 27 26 25 1 2 3 4 RF IN 5 6 7 8 24 23 22 21 20RF OUT 19 18 17 9 10 11 12 13 14 15 16 General Description TriQuint’s TGA2237-SM is a wideband distributed amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process. The TGA2237-SM operates from 0.03 – 2.