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TGA2622-CP - 35W GaN Power Amplifier

General Description

Qorvo’s TGA2622-CP is a packaged high-power X-Band amplifier fabricated on Qorvo’s QGaN25 0.25 um GaN on SiC process.

Operating from 9 to 10 GHz, the TGA2622CP achieves 35 W saturated output power, a power-added efficiency of greater than 43 %, and power gain of 27.5 dB.

Key Features

  • Frequency Range: 9.
  • 10 GHz.
  • PSAT: 45.5 dBm @ PIN = 18 dBm.
  • PAE: > 43 % @ PIN = 18 dBm.
  • Power Gain: 27.5 dB @ PIN = 18 dBm.
  • Bias: VD = 28 V, IDQ = 290 mA, VG = -2.7 V typical, pulsed (PW = 100 µs, DC = 10 %).
  • Package Dimensions: 15.2 x 15.2 x 3.5 mm.
  • Package base is pure Cu offering superior thermal management Performance is typical across frequency. Please 1 10 reference electrical specification table and data plots for.

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Datasheet Details

Part number TGA2622-CP
Manufacturer Qorvo
File Size 663.26 KB
Description 35W GaN Power Amplifier
Datasheet download datasheet TGA2622-CP Datasheet

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TGA2622-CP 9 – 10 GHz 35 W GaN Power Amplifier Product Description Qorvo’s TGA2622-CP is a packaged high-power X-Band amplifier fabricated on Qorvo’s QGaN25 0.25 um GaN on SiC process. Operating from 9 to 10 GHz, the TGA2622CP achieves 35 W saturated output power, a power-added efficiency of greater than 43 %, and power gain of 27.5 dB. The TGA2622-CP is packaged in a 10-lead 15x15 mm boltdown package with a Cu base for superior thermal management. It can support a range of bias voltages and performs well under CW and pulsed conditions. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration. The TGA2622-CP is ideally suited for both commercial and defense applications. Lead free and RoHS compliant.