Datasheet Details
| Part number | TGA2622-CP |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 552.81 KB |
| Description | GaN Power Amplifier |
| Datasheet |
 TGA2622-CP Datasheet
|
|
|
General Description
TriQuint’s TGA2622-CP is a packaged, high power Xband amplifier fabricated on TriQuint’s TQGaN25 0.25 um GaN on SiC production process.
10 GHz, the TGA2622-CP achieves 35 W saturated output powers, a power-added efficiency of greater than 43 %, and power gain of 27.5 dB.
Key Features
- Frequency Range: 9.
- 10 GHz.
- PSAT: 45.5 dBm @ PIN = 18 dBm.
- PAE: >43% @ PIN = 18 dBm.
- Power Gain: 27.5 dB @ PIN = 18 dBm.
- Bias: VD = 28 V, IDQ = 290 mA, VG = -2.7 V Typical (Pulsed VD: PW = 100 us and DC = 10 %).
- Package Dimensions: 15.2 x 15.2 x 3.5 mm.
- Package base is pure Cu offering superior thermal management Functional Block Diagram 1 10 29 38 47 56 General.