• Part: TGA2622-CP
  • Manufacturer: TriQuint Semiconductor
  • Size: 552.81 KB
Download TGA2622-CP Datasheet PDF
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TGA2622-CP Description

TriQuint’s TGA2622-CP is a packaged, high power Xband amplifier fabricated on TriQuint’s TQGaN25 0.25 um GaN on SiC production process. Operating from 9 10 GHz, the TGA2622-CP achieves 35 W saturated output powers, a power-added efficiency of greater than 43 %, and power gain of 27.5 dB. The TGA2622-CP is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for superior thermal management.

TGA2622-CP Key Features

  • Frequency Range: 9
  • 10 GHz
  • PSAT: 45.5 dBm @ PIN = 18 dBm
  • PAE: >43% @ PIN = 18 dBm
  • Power Gain: 27.5 dB @ PIN = 18 dBm
  • Bias: VD = 28 V, IDQ = 290 mA, VG = -2.7 V Typical (Pulsed VD: PW = 100 us and DC = 10 %)
  • Package Dimensions: 15.2 x 15.2 x 3.5 mm
  • Package base is pure Cu offering superior thermal
  • 10 GHz, the TGA2622-CP achieves 35 W saturated output powers, a power-added efficiency of greater than 43 %, and power g