Datasheet4U Logo Datasheet4U.com

TGA2622 - 40Watt GaN Power Amplifier

General Description

9.0

Data Sheet Rev.

A, September 2020 | Subject to change without notice 1 of 14 © 2020 Qorvo US, Inc.

All rights reserved.

 10.0 GHz 40 Watt GaN Power Amplifier Abs

Key Features

  • Frequency Range: 9.
  • 10 GHz.
  • PSAT: 46dBm (PIN = 18 dBm).
  • P1dB: > 40dBm.
  • PAE: > 46% (PIN = 18 dBm).
  • Large Signal Gain: 28 dB.
  • Small Signal Gain: 32 dB.
  • Bias: VD = 28 V, IDQ = 290 mA.
  • Pulsed VD: PW = 100 us and DC = 10%.
  • Die Dimensions: 5.0 x 4.86 x 0.10 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details.

📥 Download Datasheet

Datasheet Details

Part number TGA2622
Manufacturer Qorvo
File Size 842.71 KB
Description 40Watt GaN Power Amplifier
Datasheet download datasheet TGA2622 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TGA2622 ® 9.0 – 10.0 GHz 40 Watt GaN Power Amplifier Product Overview Qorvo’s TGA2622 is an x-band, high power MMIC amplifier fabricated on Qorvo’s production 0.25um GaN on SiC process (QGaN25). The TGA2622 operates from 9 – 10 GHz and provides a superior combination of power, gain and efficiency. Achieving 40W of saturated output power with 28 dB of large signal gain and 45% power-added efficiency, the TGA2622 provides the level of performance demanded by today’s system architectures. Depending on the system requirements, the TGA2622 can support cost saving initiatives on existing systems while supporting next generation systems with increased performance. Lead-free and RoHS compliant.