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TGA2624-SM - 20W GaN Power Amplifier

General Description

Qorvo’s TGA2624-SM is a packaged, high power X-Band amplifier fabricated on Qorvo’s production 0.25 um GaN on SiC process.

Operating from 9-10 GHz, the TGA2624-SM typically generates 20 W of saturated output power with a power-added efficiency greater than 40% and 25 dB of large signal gain.

Key Features

  • Frequency Range: 9.
  • 10 GHz.
  • PSAT: 43 dBm @ PIN = 18 dBm.
  • PAE: >40% @ PIN = 18 dBm.
  • Power Gain: 25 dB @ PIN = 18 dBm.
  • Bias: VD = 28 V, IDQ = 365 mA (Pulsed VD: PW = 100 us and DC = 10 %).
  • Package Dimensions: 7 x 7 x 1.75 mm Functional Block Diagram.

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Datasheet Details

Part number TGA2624-SM
Manufacturer Qorvo
File Size 690.62 KB
Description 20W GaN Power Amplifier
Datasheet download datasheet TGA2624-SM Datasheet

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TGA2624-SM ® 9–10 GHz 20 W GaN Power Amplifier General Description Qorvo’s TGA2624-SM is a packaged, high power X-Band amplifier fabricated on Qorvo’s production 0.25 um GaN on SiC process. Operating from 9-10 GHz, the TGA2624-SM typically generates 20 W of saturated output power with a power-added efficiency greater than 40% and 25 dB of large signal gain. The TGA2624-SM is packaged in a 7 x 7 mm air-cavity, laminate based QFN. Both RF ports are internally DC blocked and matched to 50 ohms enabling simple system integration. Ideally suited for pulsed applications, the TGA2624-SM offers excellent power, PAE and gain performance that can save costs on existing platforms while enabling the development of future systems. Lead-free and RoHS compliant.