Datasheet Details
| Part number | TGA2624-CP |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 440.36 KB |
| Description | GaN Power Amplifier |
| Datasheet |
 TGA2624-CP Datasheet
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General Description
TriQuint’s TGA2624-CP is a packaged high-power X-Band amplifier fabricated on TriQuint’s TQGaN25 0.25 um GaN on SiC process.
Operating from 9 to 10 GHz, the TGA2624-CP achieves 42 dBm saturated output power, a power-added efficiency of > 37 %, and power gain of 27 dB.
Key Features
- Frequency Range: 9.
- 10 GHz.
- Pout: 42 dBm (PIN = 15 dBm).
- PAE: > 37 % (PIN = 15 dBm).
- Power Gain: 27 dB (PIN = 15 dBm).
- Bias: VD = 28 V, IDQ = 365 mA, VG = -2.6 V typical (Pulsed: PW = 100 µs, DC = 10%).
- Package Dimensions: 15.2 x 15.2 x 3.5 mm.
- Package base is pure Cu offering superior thermal management Functional Block Diagram 1 2 3 4 5 10 9 8 7 6 General.