3DG110
Features
: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
Specifications
(Ta = 25°C )
Parameter name
Symbols Unit
3DG101
3DG111
C-B Breakdown Voltage V(BR)CBO V
C-E Breakdown Voltage V(BR)CEO V
E-Base Breakdown Voltage V(BR)EBO V
Total Dissipation
Ptot m W
Max. Collector Current ICM m A
Junction Temperature
Tjm °C
Storage Temperature
Tstg °C
20 30 40
15 20 30
≥4 (IE=0.1m A) 100 (Ta=25°C)
20 30
15 20
≥4 (IE=0.1m A) 300 (Ta=25°C)
50 175 -55~+175
F Test Condition
40 IC=0.1m A
≥4 (IE=0.1m A) 300 (Ta=25°C)
Collector- Emitter
VCE(sat) V
Saturation Voltage Drop
0.35 (IC=10m A, IB=1m...
