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3DG111 - NPN Silicon High Frequency Low Power Transistor

Download the 3DG111 datasheet PDF. This datasheet also covers the 3DG101 variant, as both devices belong to the same npn silicon high frequency low power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (3DG101-QunliElectric.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 3DG111
Manufacturer Qunli Electric
File Size 44.70 KB
Description NPN Silicon High Frequency Low Power Transistor
Datasheet download datasheet 3DG111 Datasheet

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Other Datasheets by Qunli Electric

Part Number Description
3DG110 NPN Silicon High Frequency Low Power Transistor
3DG101 NPN Silicon High Frequency Low Power Transistor
3DG140 NPN Silicon High FrequencyLow Power Transistor
3DG181 NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor
3DG182 NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
3DG101, 3DG110, 3DG111 NPN Silicon High Frequency Low Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611 TECHNICAL DATA: Specifications (Ta = 25°C ) Parameter name Symbols Unit 3DG101 3DG110 3DG111 C-B Breakdown Voltage V(BR)CBO V C-E Breakdown Voltage V(BR)CEO V E-Base Breakdown Voltage V(BR)EBO V Total Dissipation Ptot mW Max. Collector Current ICM mA Junction Temperature Tjm °C Storage Temperature Tstg °C ABC 20 30 40 15 20 30 ≥4 (IE=0.