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2N3264 - Power Transistors

Download the 2N3264 datasheet PDF. This datasheet also covers the 2N3263 variant, as both devices belong to the same power transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low saturation voltages - 2N3263 and 2N3265 VCE(sad = 0.75 V (max. ) at IC = 15 A VBE(sat) = 1.60 V (max. ) at IC = 15 A 2N3264 and 2N3266 = =vCE (sad 1.20 V (max. ) at Ic 15 A VBE (sat) = 1_80 V (max. ) at IC = 15 A.
  • High reliability and uniformity of characteristics.
  • High power dissipation.
  • Fast rise time at high collector current - 0.2/1s at 10 A (typical) RCA-2N3263, 2N3264, 2N3265, and 2N3266a are n-p-n epitaxial silicon power transistors designed for high.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2N3263-RCA.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2N3264
Manufacturer RCA
File Size 365.65 KB
Description Power Transistors
Datasheet download datasheet 2N3264 Datasheet

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Other Datasheets by RCA

Part Number Description
2N3263 Power Transistors
2N3265 Power Transistors
2N3266 Power Transistors
2N3228 Thyristors
2N3478 RF Power Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
File No. 54 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ oornLJiJ Power Transistors Solid State Division 2N3263 2N3264 2N3265 2N3266 ~ H-1354 ~3263.2N3264 IRADIAL) .11 y . . .H-1785 J 2N3265:2N3266 IJEDEC TO-631 High-Power,High-Speed, High-Current Silicon N-P-N Power Transistors Epitaxial Types for Aerospace, Military, and Industrial Applications Features: • Low saturation voltages - 2N3263 and 2N3265 VCE(sad = 0.75 V (max.) at IC = 15 A VBE(sat) = 1.60 V (max.) at IC = 15 A 2N3264 and 2N3266 = =vCE (sad 1.20 V (max.) at Ic 15 A VBE (sat) = 1_80 V (max.) at IC = 15 A • High reliability and uniformity of characteristics • High power dissipation • Fast rise time at high collector current - 0.