2N3264 Description
.H-1785 J 2N3265:2N3266 IJEDEC TO-631 High-Power,High-Speed, High-Current Silicon N-P-N Power Transistors Epitaxial Types for Aerospace, Military, and Industrial Applications.
2N3264 Key Features
- Low saturation voltages
- 2N3263 and 2N3265 VCE(sad = 0.75 V (max.) at IC = 15 A VBE(sat) = 1.60 V (max.) at IC = 15 A
- High reliability and uniformity of characteristics
- High power dissipation
- Fast rise time at high collector current
- 0.2/1s at 10 A (typical)