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2N3478 - RF Power Transistors

Key Features

  • o high gain. bandwidth product fT = 900MHz typo.
  • low noise figure NF = SdB typo at 470MHz 4.SdB max. at 200 MHz 2.Sd8 typo at 60MHz.
  • high unneutrolized power gain Gpe = 11.Sd8 min. at 200MHz.
  • hermetically sealed four-lead package.
  • all active elements insulated from case.
  • low collector-to-base feedback capacitance, Ccb 0.7 pF max. RCA-2N3478 is an epitrucial planar transistor of the silicon n-p-n 1;ype with characteristics which make it extremely use.

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Datasheet Details

Part number 2N3478
Manufacturer RCA
File Size 282.02 KB
Description RF Power Transistors
Datasheet download datasheet 2N3478 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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OO(]5LJD Solid State Division File No. 77 RF Power Tran$istors 2N3478 SILICON N-P-N EPITAXIAL PLANAR TRANSISTOR JEDEC TD·72 H-1299 For VHF/UHF Applications in Industrial and Commercial Equipment Features: o high gain.bandwidth product fT = 900MHz typo • low noise figure NF = SdB typo at 470MHz 4.SdB max. at 200 MHz 2.Sd8 typo at 60MHz • high unneutrolized power gain Gpe = 11.Sd8 min. at 200MHz • hermetically sealed four-lead package • all active elements insulated from case • low collector-to-base feedback capacitance, Ccb 0.7 pF max. RCA-2N3478 is an epitrucial planar transistor of the silicon n-p-n 1;ype with characteristics which make it extremely useful as a general purpose rf amplifier at frequencies up to 470MHz.