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RCA32 - Power Transistor

Features

  • JEDEC TO.
  • 220 AB.
  • 40 Wat 25°C case temperature.
  • 5 A rated collector current.
  • Min. fT of 3 MHz at 10 V, 500 mA.
  • Designed for complementary use with RCA31 , RCA31A, RCA31B, and RCA31C n.
  • p.
  • n types.
  • RCA30, RCA30A, RCA30B, and RCA30C are epitaxial.
  • base, silicon p.
  • n.
  • p transistors. They are intended for a wide variety of switching and amplifier.

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Datasheet Details

Part number RCA32
Manufacturer RCA
File Size 256.75 KB
Description Power Transistor
Datasheet download datasheet RCA32 Datasheet
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Full PDF Text Transcription

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_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 586 D1CTI3LJD Solid State Division Power Transistors RCA32 RCA32B RCA32A RCA32C Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors For Power-Amplifier and High-Speed·Switching Applications Features: JEDEC TO·220 AB • 40 Wat 25°C case temperature • 5 A rated collector current • Min. fT of 3 MHz at 10 V, 500 mA • Designed for complementary use with RCA31 , RCA31A, RCA31B, and RCA31C n·p·n types* RCA30, RCA30A, RCA30B, and RCA30C are epitaxial·base, silicon p·n·p transistors. They are intended for a wide variety of switching and amplifier applications, such as series and shunt regulators and. driver and output stages of high·fidelity amplifiers.
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