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_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ File No. 586
D1CTI3LJD
Solid State Division
Power Transistors
RCA32 RCA32B RCA32A RCA32C
Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors
For Power-Amplifier and High-Speed·Switching Applications
Features:
JEDEC TO·220 AB
• 40 Wat 25°C case temperature • 5 A rated collector current • Min. fT of 3 MHz at 10 V, 500 mA • Designed for complementary use with RCA31 ,
RCA31A, RCA31B, and RCA31C n·p·n types*
RCA30, RCA30A, RCA30B, and RCA30C are epitaxial·base, silicon p·n·p transistors. They are intended for a wide variety of switching and amplifier applications, such as series and shunt regulators and. driver and output stages of high·fidelity amplifiers.
RCA32C Datasheet
