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BC846 - NPN Silicon Planar Epitaxial Transistors

General Description

Collector Base Voltage Collector Emmitter Voltage (VBE = 0V) Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current - Peak Emitter Current - Peak Base Current - Peak Total power dissipation up to Tamb = 25 oC Storge Temperature Junction Temperature SYMBOL VCBO VCES

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Datasheet Details

Part number BC846
Manufacturer RECTRON
File Size 75.46 KB
Description NPN Silicon Planar Epitaxial Transistors
Datasheet download datasheet BC846 Datasheet

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Other Datasheets by RECTRON

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BC846A NPN Silicon Planar Epitaxial Transistors
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BC847 NPN Silicon Planar Epitaxial Transistors
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BC847B NPN Silicon Planar Epitaxial Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NPN Silicon Planar Epitaxial Transistors BC846 BC847 BC848 Pin configuration: 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 SOT-23 SMD Package Unit: inch (mm) Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) DESCRIPTION Collector Base Voltage Collector Emmitter Voltage (VBE = 0V) Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current - Peak Emitter Current - Peak Base Current - Peak Total power dissipation up to Tamb = 25 oC Storge Temperature Junction Temperature SYMBOL VCBO VCES VCEO VEBO IC ICM -IEM IBM Ptot** Tstg Tj BC846 80 80 65 6 Thermal Resistance From junction to ambient Rth(j-a)** **Mounted on a ceramic substrate of 8mm x 10mm x 0.