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BC848 - NPN Silicon Planar Epitaxial Transistors

This page provides the datasheet information for the BC848, a member of the BC846 NPN Silicon Planar Epitaxial Transistors family.

Datasheet Summary

Description

Collector Base Voltage Collector Emmitter Voltage (VBE = 0V) Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current - Peak Emitter Current - Peak Base Current - Peak Total power dissipation up to Tamb = 25 oC Storge Temperature Junction Temperature SYMBOL VCBO VCES

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Datasheet preview – BC848

Datasheet Details

Part number BC848
Manufacturer RECTRON
File Size 75.46 KB
Description NPN Silicon Planar Epitaxial Transistors
Datasheet download datasheet BC848 Datasheet
Additional preview pages of the BC848 datasheet.

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Other Datasheets by RECTRON
  • BC848A - NPN Transistor
  • BC848B - NPN Transistor
  • BC848C - NPN Transistor
  • BC846 - NPN Silicon Planar Epitaxial Transistors
  • BC846A - NPN Silicon Planar Epitaxial Transistors
  • BC846B - NPN Transistor
  • BC847 - NPN Silicon Planar Epitaxial Transistors
  • BC847A - NPN Silicon Planar Epitaxial Transistors

Full PDF Text Transcription

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NPN Silicon Planar Epitaxial Transistors BC846 BC847 BC848 Pin configuration: 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 SOT-23 SMD Package Unit: inch (mm) Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) DESCRIPTION Collector Base Voltage Collector Emmitter Voltage (VBE = 0V) Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current - Peak Emitter Current - Peak Base Current - Peak Total power dissipation up to Tamb = 25 oC Storge Temperature Junction Temperature SYMBOL VCBO VCES VCEO VEBO IC ICM -IEM IBM Ptot** Tstg Tj BC846 80 80 65 6 Thermal Resistance From junction to ambient Rth(j-a)** **Mounted on a ceramic substrate of 8mm x 10mm x 0.
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