Collector Base Voltage Collector Emmitter Voltage (+VBE = 1V) Collector Emitter Voltage
Emitter Base Voltage Collector Current (DC) Collector Current - Peak Emitter Current - Peak Base Current - Peak Total power dissipation up to Tamb = 60 oC Storge Temperature Junction Temperature
SYMBOL VCBO VCEX
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PNP Silicon Planar Epitaxial Transistors
BC856 BC857 BC858
Pin configuration: 1. BASE 2. EMITTER 3. COLLECTOR
3
1
2
Unit: inch (mm)
Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise)
DESCRIPTION Collector Base Voltage Collector Emmitter Voltage (+VBE = 1V) Collector Emitter Voltage
Emitter Base Voltage Collector Current (DC) Collector Current - Peak Emitter Current - Peak Base Current - Peak Total power dissipation up to Tamb = 60 oC Storge Temperature Junction Temperature
SYMBOL VCBO VCEX VCEO VEBO IC ICM IEM IBM
Ptot**
Tstg Tj
BC856
80 80 65
Thermal Resistance From junction to tab From tab to soldering points From soldering points to ambient
Rth(j-t) Rth(t-s) Rth(s-a)**
**Mounted on a ceramic substrate of 8mm x 10mm x 0.
BC856 Datasheet
