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BC857 - PNP Silicon Planar Epitaxial Transistors

This page provides the datasheet information for the BC857, a member of the BC856 PNP Silicon Planar Epitaxial Transistors family.

Datasheet Summary

Description

Collector Base Voltage Collector Emmitter Voltage (+VBE = 1V) Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current - Peak Emitter Current - Peak Base Current - Peak Total power dissipation up to Tamb = 60 oC Storge Temperature Junction Temperature SYMBOL VCBO VCEX

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Datasheet preview – BC857

Datasheet Details

Part number BC857
Manufacturer RECTRON
File Size 75.38 KB
Description PNP Silicon Planar Epitaxial Transistors
Datasheet download datasheet BC857 Datasheet
Additional preview pages of the BC857 datasheet.

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Other Datasheets by RECTRON
  • BC857A - PNP Transistor
  • BC857C - PNP Transistor
  • BC856 - PNP Silicon Planar Epitaxial Transistors
  • BC856A - BIPOLAR TRANSISTORS
  • BC856B - PNP Transistor
  • BC858 - PNP Silicon Planar Epitaxial Transistors
  • BC858A - PNP Transistor
  • BC858B - SOT-23 BIPOLAR TRANSISTORS

Full PDF Text Transcription

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PNP Silicon Planar Epitaxial Transistors BC856 BC857 BC858 Pin configuration: 1. BASE 2. EMITTER 3. COLLECTOR 3 1 2 Unit: inch (mm) Absolute Maximum Ratings (Ta = 25 oC unless specified otherwise) DESCRIPTION Collector Base Voltage Collector Emmitter Voltage (+VBE = 1V) Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current - Peak Emitter Current - Peak Base Current - Peak Total power dissipation up to Tamb = 60 oC Storge Temperature Junction Temperature SYMBOL VCBO VCEX VCEO VEBO IC ICM IEM IBM Ptot** Tstg Tj BC856 80 80 65 Thermal Resistance From junction to tab From tab to soldering points From soldering points to ambient Rth(j-t) Rth(t-s) Rth(s-a)** **Mounted on a ceramic substrate of 8mm x 10mm x 0.
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