RF2126 Datasheet | RF Micro Devices

Features - Single 3V to 6.0V Supply - 1.3W Output Power - 12d B Gain - 45% Efficiency - Power Down Mode - 400MHz to 2700MHz Operation Applications - 2.5GHz ISM Band Applications - Digital munication Systems - PCS munication Systems - mercial and Consumer Systems - Portable Battery-Powered Equipment RF IN 1 RF IN 2 PC 3 VCC 4 BIAS CIRCUIT PACKAGE BASE GND 8 RF OUT 7 RF OUT 6 RF OUT 5 RF OUT Functional Block Diagram Product Description The RF2126 is a high-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as the final RF amplifier in 2.45 GHz ISM applications such as WLAN and POS terminals. The part will also function as the final stage in transmitters requiring linear amplification operating between 400MHz and 2700MHz. The device is packaged in an 8-lead plastic package with a backside ground. The device is self-contained with the exception of the output matching network and power supply feed line. It produces a typical output power level of 1W. Ordering Information RF2126 RF2126PCK High Power Linear Amplifier Fully Assembled Evaluation Board Optimum Technology Matching® Applied 9Ga As HBT Si Ge Bi CMOS Ga As p HEMT Ga N HEMT Ga As MESFET Si Bi CMOS Si CMOS In Ga P HBT Si Ge HBT Si BJT RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, Power Star®, POLARIS™ TOTAL RADIO™ and Ultimate Blue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc. Rev A14 DS070511 7628 Thorndike Road, Greensboro, NC 27409-9421 - For sales or technical support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.. 2-3...