RF Micro Devices RF2127
The RF2127 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 1800MHz digital PCS phone transmitters requiring linear amplification operating between 1800MHz and 1900MHz, with over 100mW transmitted power. It will also function as the driver stage for the RF2125 high power amplifier.APPLICATIONS
● DECT CordlessAPPLICATIONS
● PCS Communication Systems RF2127 MEDIUM POWER LINEAR AMPLIFIER● Commercial and Consumer Systems
● Portable Battery-Powered Equipment 2 POWER AMPLIFIERS Product
DESCRIPTION
A simple power down function is included for TDD operation. Optimum Technology Matching® Applied Si BJT üGaAs HBT GaAs MESFET Si Bi-CMOS SiGe HBT Si CMOS VCC2 1 GND1 2 PD 3 RF IN 4 BIAS CIRCUITS 8 VCC1 7 RF OUT 6 RF OUT 5 GND2 0.160 0.152 0.018 0.014 -A- 0.010 0.004 0.200 0.192 0.050