RF2127 Datasheet | RF Micro Devices

Description The RF2127 is a medium-power, high-efficiency, linear amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 1800MHz digital PCS phone transmitters requiring linear amplification operating between 1800MHz and 1900MHz, with over 100m W transmitted power. It will also function as the driver stage for the RF2125 high power amplifier. A simple power down function is included for TDD operation. Optimum Technology Matching® Applied Si BJT üGa As HBT Ga As MESFET Si Bi-CMOS Si Ge HBT Si CMOS VCC2 1 GND1 2 PD 3 RF IN 4 BIAS CIRCUITS 8 VCC1 7 RF OUT 6 RF OUT 5 GND2 0.160 0.152 0.018 0.014 -A- 0.010 0.004 0.200...