RF Micro Devices RF2311
The RF2311 is a general purpose, low cost low power RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 50 Ω gain block. The gain flatness and high bandwidth make the device suitable for many other applications as well.APPLICATIONS
● General Purpose High Bandwidth Gain Blocks● IF or RF Buffer Amplifiers
● Broadband Test Equipment
● Final PA for Medium Power
APPLICATIONS
● Driver Stage for Power Amplifiers GENERAL PURPOSE AMPLIFIER ProductDESCRIPTION
APPLICATIONS
include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 1600MHz. The device is self-contained with 50 Ω input and output impedances, and no external DC biasing elements are required to operate as specified. 4 .156 .152 .017 1 .195 .191 .050 .240 .232 .056 .052 .004 MIN 5° .022 .018 .008 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü Package Style: SOP-8 GaAs HBT SiGe HBT GaAs MESFET Si CMOSFEATURES
● DC to well over 1600MHz Operation● Internally Matched Input and Output
● 14dB Small Signal Gain
● 4.2dB Noise Figure
● +9dBm Output Power
● Single 2.7V to 6V Positive Power Supply VCC 1 GND 2 GND 3 RF IN 4 8 RF OUT 7 GND 6 GND 5 GND Ordering Information RF2311 RF2311 PCBA General Purpose Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc.