RF2312 Datasheet | RF Micro Devices

Typical Applications - CATV Distribution Amplifiers - Cable Modems - Broadband Gain Blocks - Laser Diode Driver - Return Channel Amplifier - Base Stations LINEAR GENERAL PURPOSE AMPLIFIER -A0.160 0.152 0.018 0.014 0.010 0.004 The RF2312 is a general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75 Ω gain block. The gain flatness of better than 0.5d B from 5MHz to 1000MHz, and the high linearity, make this part ideal for cable TV applications. Other applications include IF and RF amplification in wireless voice and data munication products operating in frequency bands up to 2500MHz. The device is self-contained with 75 Ω input and output impedances, and requires only two external DC biasing elements to operate as specified. 0.200 0.192 0.248 0.232 8° MAX 0° MIN 0.0500 0.0164 0.059 0.057 0.0100 0.0076 NOTES: 1. Shaded lead is pin 1. 2. All dimensions are excluding flash, protrusions or burrs. 3. Lead coplanarity: 0.005 with respect to datum "A". 4. Package surface finish: Matte (Charmilles #24~27). Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü Package Style: SOIC-8 Ga As HBT Si Ge HBT Ga As MESFET Si CMOS Features - DC to well over 2500MHz Operation - Internally Matched Input and Output - 15d B Small Signal Gain RF IN 1 GND 2 GND 3 GND 4 8 7 6 5 RF OUT GND GND GND - 3.8d B Noise Figure - +20d Bm Output...