• Part: RF2870
  • Description: CDMA LOW NOISE AMPLIFIER/MIXER 900MHz DOWNCONVERTER
  • Manufacturer: RF Micro Devices
  • Size: 400.08 KB
Download RF2870 Datasheet PDF
RF Micro Devices
RF2870
RF2870 is CDMA LOW NOISE AMPLIFIER/MIXER 900MHz DOWNCONVERTER manufactured by RF Micro Devices.
Description -A- CDMA LOW NOISE AMPLIFIER/MIXER 900MHz DOWNCONVERTER - General Purpose Downconverter - mercial and Consumer Systems - Portable Battery-Powered Equipment 0.10 C A 0.05 C 2 PLCS The RF2870 is a receiver front-end for CDMA cellular applications. It is designed to amplify and downconvert RF signals, while providing 28.5d B of stepped gain control range. Features include digital control of LNA gain, mixer gain, and power down mode. Another feature of the chip is adjustable IIP3 of the mixer using an off-chip current setting resistor. Noise figure, IP3, and other specs are designed to be patible with the IS-98B interim standard for CDMA cellular munications. The IC is manufactured on an advanced Silicon Germanium Bi CMOS process and is assembled in a 3mmx3mm, 16pin, QFN package. 1.50 TYP 2 PLCS 0.90 0.85 0.70 0.65 0.10 C B 0.05 0.00 3.00 12° MAX 2 PLCS 0.10 C B -B- 1.37 TYP 2 PLCS -CDimensions in mm. SEATING PLANE 2.75 SQ 0.60 0.24 TYP 0.10 C A 0.10 M C A B 0.30 0.18 NOTES: 1. Shaded lead is pin 1. 2 Dimension applies to plated terminal: to be measured between 0.20 mm and 0.25 mm from terminal end. PIN 1 ID R.20 1.65 SQ. 1.35 0.50 0.30 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS In Ga P/HBT Ga As HBT Si Ge HBT Ga N HEMT Ga As MESFET Package Style: QFN, 16-Pin, 3x3 9Si Ge Bi-CMOS MIX GAIN Si CMOS Features - 3mmx3mm LNA/Mixer...