RF2878 Datasheet | RF Micro Devices

Description The RF2878 is a low noise amplifier with a very high dynamic range designed for digital cellular applications. The device functions as an outstanding front end low noise amplifier or power amplifier driver amplifier in the transmit chain of digital subscriber units where low transmit noise power is a concern. When used as an LNA, the bias current can be set externally. When used as a PA driver, the IC can operate directly from a single cell Li-ion battery and includes a power down feature that can be used to pletely turn off the device. The IC is featured in a standard SOT 5-lead plastic package. NOTE: The RF2878 is a Pb-free product. If a non-Pb-free product with the same functionality and package is desired, please see the RF2361. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS In Ga P/HBT 1.60 + 0.01 0.400 0.15 0.05 2.90 + 0.10 2.80 + 0.20 3° MAX 0° MIN 0.45 + 0.10 0.127 1.44 1.04 Dimensions in mm. 9Ga As HBT Si Ge HBT Package Style: SOT 5-Lead Ga As MESFET Si CMOS Si Ge Bi-CMOS Features - Low Noise and High Intercept Point - Adjustable Bias Current - Power Down Control - Single 2.5V to 6.0V Power Supply - 150MHz to 2500MHz Operation - Extremely Small SOT 5-Lead Package Ga N HEMT RF IN GND2 GND1 RF OUT Ordering Information RF2878 3V Low Noise Amplifier/ 3V PA Driver Amplifier RF2878 PCBA-D Fully Assembled Evaluation Board (Driver) RF2878 PCBA-L Fully Assembled Evaluation Board (LNA) RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://.rfmd. Functional Block Diagram Rev A0 060206 4-331 Absolute Maximum Ratings Parameter Supply Voltage, VCC Power Down Voltage, VPD Input RF Level Operating Ambient Temperature Storage Temperature Rating -0.5 to +8.0 <VCC +10 -40 to +85 -40 to...