Datasheet4U Logo Datasheet4U.com

RF3145 - QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE

General Description

The RF3145 is a high power, high efficiency power amplifier module with integrated power control.

This module is self-contained with 50 Ω input and output terminals.

Key Features

  • Integrated Power Control & Band Select.
  • Single 3.0V to 4.8V Supply Voltage SiGe Bi-CMOS NC.
  • +35.0dBm GSM Output Pwr at 3.5V.
  • +33dBm DCS/PCS Output Pwr at 3.5V 11 DCS OUT 12 DCS IN 1 BAND SELECT 2 TX ENABLE 3 VBATT 4 VMODE 5 VRAMP 6 GSM IN 7 8 NC 9 GSM OUT 10 NC.
  • +29dBm 8PSK Output Pwr.
  • 53% GSM and 50% DCS/PCS PAE Ordering Information RF3145 Quad-Band GSM/EDGE/GSM850/DCS/PCS Power Amplifier Module Power Amplifier Module, 5 Piece Sample.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RF3140 QUAD-BAND GSM850/GSM900/DCS/PCS PCS RF Monolithics
RF310 (RF310 / RF313) HIGH REPEATABILITY ULTRAMINIATURE T0-5 RF BYPASS RELAY Teledyne Technologies Incorporated
RF312 DPDT Non-Latching Electromechanical Relay Teledyne
RF313 (RF310 / RF313) HIGH REPEATABILITY ULTRAMINIATURE T0-5 RF BYPASS RELAY Teledyne Technologies Incorporated
RF3133 QUAD-BAND GSM850/GSM/DCS/PCS POWER AMP MODULE RF Monolithics

Other Datasheets by RF Micro Devices (now Qorvo)

Part Number Description
RF3140 QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE
RF3146 QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE
RF3146D DUAL-BAND GSM900/DCS POWER AMP MODULE
RF3100-2 3V 900MHZ LINEAR AMPLIFIER MODULE
RF3100-3 3V 1900MHZ LINEAR AMPLIFIER MODULE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com RF3145 0 Typical Applications • 3V Dual/Triple/Quad-Band Mode Handsets • Commercial and Consumer Systems • Portable Battery-Powered Equipment • GSM850 and GSM900 Products Product Description The RF3145 is a high power, high efficiency power amplifier module with integrated power control. This module is self-contained with 50 Ω input and output terminals. The device is manufactured on an advance Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final dual-mode GMSK/8PSK RF amplifier in GSM, DCS and PCS handheld cellular equipment and other applications in the 824MHz to 849MHz, 880MHz to 915MHz, and in the 1710MHz to 1910MHz bands. Internal band select provides control to select the GSM850/GSM900 or DCS/PCS band.