RF3145 Datasheet | RF Micro Devices

Description The RF3145 is a high power, high efficiency power amplifier module with integrated power control. This module is self-contained with 50 Ω input and output terminals. The device is manufactured on an advance Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final dual-mode GMSK/8PSK RF amplifier in GSM, DCS and PCS handheld cellular equipment and other applications in the 824MHz to 849MHz, 880MHz to 915MHz, and in the 1710MHz to 1910MHz bands. Internal band select provides control to select the GSM850/GSM900 or DCS/PCS band. The device is packaged on ultra-small LCC, minimizing the required board space. Ro HS pliant & Pb-Free Product QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE - EDGE and GPRS Class 12 patible - DCS/PCS Products 1.70 1.45 10.00±0.10 0.450±0.075 10.00±0.10 1.275 7.227 7.325 7.500 TYP 8.275 8.300 TYP 9.204 9.242 9.646 9.600 TYP 8.800 TYP 8.200 TYP 7.400 TYP 6.800 TYP 6.000 TYP 5.475 4.525 4.000 TYP 3.200 TYP 2.600 TYP 1.800 TYP 1.200 TYP 0.400 TYP 0.000 0.000 0.400 TYP 1.200 TYP 1.797 TYP 2.600 TYP 3.200 TYP 4.000 TYP 4.600 TYP 5.400 TYP 6.000 TYP 6.800 TYP 7.330 8.280 8.800 TYP 9.600 TYP 8.725 6.155 6.100 5.925 5.400 TYP 4.600 TYP 4.075 3.955 1.275 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS In Ga P/HBT Package Style: Module (10mmx10mm) Ga As HBT Si Ge HBT Ga N HEMT 9Si CMOS Ga As MESFET Features - Integrated Power Control & Band Select - Single 3.0V to 4.8V Supply Voltage Si Ge Bi-CMOS - +35.0d Bm GSM Output Pwr at 3.5V - +33d Bm DCS/PCS Output Pwr at 3.5V 11 DCS OUT 12 DCS IN 1 BAND SELECT 2 TX ENABLE 3 VBATT 4 VMODE 5 VRAMP 6 GSM IN 7 8 NC 9 GSM OUT 10 NC - +29d Bm 8PSK Output Pwr - 53% GSM and 50% DCS/PCS PAE Ordering Information RF3145 Quad-Band GSM/EDGE/GSM850/DCS/PCS Power Amplifier Module Power Amplifier Module, 5 Piece Sample Pack RF3145PCBA-41XFully Assembled Evaluation Board RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC...