• Part: RF3146
  • Description: QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE
  • Manufacturer: RF Micro Devices
  • Size: 317.67 KB
Download RF3146 Datasheet PDF
RF Micro Devices
RF3146
RF3146 is QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE manufactured by RF Micro Devices.
Description The RF3146 is a high-power, high-efficiency power amplifier module with integrated power control. The device is a self-contained 7mmx7mmx0.9mm lead frame module (LFM) with 50 Ω input and output terminals. The power control function is also incorporated, eliminating the need for directional couplers, detector diodes, power control ASICs and other power control circuitry; this allows the module to be driven directly from the DAC output. The device is designed for use as the final RF amplifier in GSM850, EGSM900, DCS and PCS handheld digital cellular equipment and other applications in the 824MHz to 849MHz, 880MHz to 915MHz, 1710MHz to 1785MHz and 1850MHz to 1910MHz bands. On-board power control provides over 50d B of control range with an analog voltage input; and, power down with a logic “low” for standby operation. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS In Ga P/HBT QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE - GSM850/EGSM900/DCS/PCS Products - GPRS Class 12 patible - Power Star TM Module -A- 7.00 TYP 6.75 TYP 0.10 C A 2 PLCS 0.08 C 0.70 0.65 0.10 C B 2 PLCS 0.90 0.85 0.05 0.00 2 PLCS 0.10 C B -B2 PLCS 0.10 C A 3.37 TYP 3.50 TYP Dimensions in mm. -C- SEATING PLANE 0.10M C A B 0.60 TYP 0.24 0.60 TYP 0.24 Shaded lead is pin 1. 0.30 0.18 2.20 1.90 0.30 0.50 TYP 0.30 5.25 4.95 Package Style: LFM, 48-Pin, 7mm x7mmx0.9mm Ga As HBT Si Ge HBT Ga N HEMT 9Si CMOS Ga As MESFET Si Ge Bi-CMOS Features - Integrated VREG - plete Power Control Solution - +35d Bm GSM Output Power at 3.5V DCS/PCS IN 37 BAND SELECT 40 TX ENABLE 41 VBATT 42 VBATT 43 VRAMP 45 GSM IN 48 Fully Integrated Power Control Circuit 31 DCS/PCS OUT - +33d Bm DCS/PCS Output Power at 3.5V - 60% GSM and 55% DCS/PCS...