RF Micro Devices RF3160
The RF3160 is a high-power, high-efficiency power amplifier module. The device is self-contained with 50 Ω input and output terminals. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in GSM/DCS handheld digital cellular equipment and other applications in the 880MHz to 915MHz and 1710MHz to 1785MHz bands.| Part No. | RF3160 |
|---|---|
| Datasheet | RF3160 Download |
| Manufacturer |  RF Micro Devices |
| Description | DUAL-BAND GSM/DCS POWER AMP MODULE |
| Buy | Stock & Price |
APPLICATIONS
● 3V Dual-Band GSM/DCS Handsets● Commercial and Consumer Systems
● Portable Battery-Powered Equipment
● GPRS Compatible
● GSM, E-GSM and DCS Products 2 POWER AMPLIFIERS Product
DESCRIPTION
On-board power control provides over 70dB of control range with an analog voltage input, and provides power down with a logic "low" for standby operation. The device is packaged in an ultra-small (9mmx11mm) LCC, minimizing the required board space. 1.910 TYP 7.040 1 1.40 1.25 0.450 ±0.075 0.760 TYP 4.520 9.09 ±0.10 FULL RADIUS TYP R0.860 TYP Side View Dimensions in mm. All contact points are gold-plated, lead-free surfaces. 11.61 ± 0.10 0.920 TYP NOTES: Bottom View 1. Shaded area is pin 1. 2. All dimensions without specific tolerances are for reference only. Optimum Technology Matching® Applied Si BJT Si Bi-CMOS ü BAND SELECT Package Style: Module (9mm x11mm) GaAs HBT SiGe HBT üSi CMOS VAPC GaAs MESFETFEATURES
● Single 2.8V to 5.0V Supply Voltage● +35.0dBm GSM Output Power at 3.2V
● +...
