RF Micro Devices RF3163
The RF3163 is a high-power, high-efficiency linear amplifier module specifically designed for 3V handheld systems. The device is manufactured on an advanced third generation GaAs HBT process, and was designed for use as the final RF amplifier in 3V IS-95/CDMA 2000 1X/AMPS handheld digital cellular equipment, spreadspectrum systems, and other applications in the 824MHz to 849MHz band. The RF3163 has a digital control line for low power applications to lower quiescent current.APPLICATIONS
● 3V CDMA/AMPS Cellular Handset● 3V CDMA2000/1XRTT Cellular Handset
● 3V CDMA2000/1X-EV-DO US-Cellular Handset
● Spread-Spectrum System Product
DESCRIPTION
3.00 3V 900MHZ LINEAR POWER AMPLIFIER MODULE -A-B- The RF3163 is assembled in a 16-pin, 3mmx3mm, QFN package. 1.00 0.80 0.10 C 3.00 0.10 C 0.10 C 0.10 C Shaded areas represent pin 1. -C- 1.45 +0.10 -0.15 Dimensions in mm. SEATING PLANE SCALE: NONE 0.50 TYP. 1.45 +0.10 -0.15 0.10 C 0.08 C 0.05 0.00 0.30 TYP. 0.18 0.10 M C A B 0.50 TYP. 0.30 Optimum Technology Matching® Applied Si BJT Si Bi-CMOS InGaP/HBT 9 Package Style: QFN, 16-Pin, 3x3 GaAs HBT SiGe HBT GaN HEMT GaAs MESFET Si CMOS SiGe Bi-CMOSFEATURES
● Input Internally Matched@50 Ω● Output Internally Matched
● 28dBm Linear Output Power
● 41% Peak Linear Efficiency
● -51dBc ACPR @ 885kHz
● 55% AMPS Efficiency NC NC 14 16 15 NC 13 NC 1 VREG 2 VMODE 3 RF IN 4 Bias NC 12 RF OUT 11 VCC2 10 VCC2 9 VCC2 Ordering Information RF3163 RF3163 PCBA 3V 900MHz Linear Power Amplifier Module Fully Assembled Evaluation Board 5 VCC1 6 NC 7 NC 8 GND Functional Block Diagram RF Micro Devices, Inc.