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RF3315 - ROADBAND HIGH LINEARITY AMPLIFIER

General Description

The RF3315 is a high-efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier packaged in a low-cost surface-mount package.

This amplifier is ideal for use in applications requiring high-linearity and low noise figure over the 300MHz to 3GHz frequency range.

Key Features

  • 300MHz to 3GHz.
  • +40dBm Output IP3.
  • 12.5dB Gain at 2.0GHz GND.
  • +23dBm P1dB.
  • 3.0dB Typical Noise Figure at 2.0GHz.
  • Single 5V Power Supply 4 1 RF IN 2 GND 3 RF OUT Ordering Information RF3315 Broadband High Linearity Amplifier RF3315PCBA-410 Fully Assembled Evaluation Board (2GHz) RF3315PCBA-411 Fully Assembled Evaluation Board (900MHz) RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RF3315 0 Pb-Free Product Typical Applications • Basestation Applications • Cellular and PCS Systems • WLL, W-CDMA Systems • Final PA for Low-Power Applications BROADBAND HIGH LINEARITY AMPLIFIER Product Description The RF3315 is a high-efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier packaged in a low-cost surface-mount package. This amplifier is ideal for use in applications requiring high-linearity and low noise figure over the 300MHz to 3GHz frequency range. The RF3315 operates from a single 5V power supply. 1.04 0.80 0.50 0.30 1.60 1.40 3.10 2.90 0.48 0.36 2 PL 4.60 4.40 2.60 2.40 Shaded lead is pin 1. Dimensions in mm. 1.80 1.45 1.75 1.40 0.43 0.38 0.53 0.