RF3928 Datasheet | RF Micro Devices

Proposed 300W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 pin Features - Wideband Operation 2.8GHz to 3.4GHz - Advanced GaN HEMT Technology - Advanced Heat-Sink Technology - Optimized Evaluation Board Layout for 50ohm Operation - Integrated matching ponents for high terminal impedances - 50V Operation Typical Performance o Pulsed Output Power 300W o Small Signal Gain 11dB o Drain Efficiency 50% o -40oC to 85oC Operating Temperature Applications - Radar - Air Traffic Control and Surveillance - General Purpose Broadband Amplifiers RF IN VG Pin 1 (CUT ) RF OUT VD Pin 2 GND BASE Functional Block Diagram Product Description The RF3928 is a 50V 300W high...