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RF3932 - 60W GaN Wideband Power Amplifier

Datasheet Summary

Description

Pin 1 2 3 Name GATE DRAIN SO

Features

  • Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 14dB at 2GHz 48V Operation Typical Performance.
  • Output Power: 75W at P3dB Drain Efficiency = 68% at P3dB -40°C to 85°C Operation.

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Datasheet preview – RF3932

Datasheet Details

Part number RF3932
Manufacturer RF Micro Devices
File Size 1.31 MB
Description 60W GaN Wideband Power Amplifier
Datasheet download datasheet RF3932 Datasheet
Additional preview pages of the RF3932 datasheet.

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Full PDF Text Transcription

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RF3932 60W GaN Wideband Power Amplifier The RF3932 is a 48V, 60W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific /medical, and general purpose broadband amplifier applications. Using an advanced high power density gallium nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RF3932 is an unmatched GaN transistor, packaged in a hermetic flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies.
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