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RF3932 - 60W GaN Wideband Power Amplifier

General Description

Pin 1 2 3 Name GATE DRAIN SO

Key Features

  • Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 14dB at 2GHz 48V Operation Typical Performance.
  • Output Power: 75W at P3dB Drain Efficiency = 68% at P3dB -40°C to 85°C Operation.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RF3932 60W GaN Wideband Power Amplifier The RF3932 is a 48V, 60W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific /medical, and general purpose broadband amplifier applications. Using an advanced high power density gallium nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RF3932 is an unmatched GaN transistor, packaged in a hermetic flanged ceramic package. This package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies.